View RF2119PCBA_1301254.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Preliminary
RF2119
HIGH EFFICIENCY 2V POWER AMPLIFIER
2
Typical Applications
* Two-Way Pagers * 915MHz ISM Band Equipment * Spread-Spectrum Systems
* 3V AMPS/ETACS Cellular Handsets * CDPD Portable Data Cards * Personal Digital Cellular
2
POWER AMPLIFIERS
Product Description
The RF2119 is a high-power, high-efficiency amplifier IC targeting 2V to 4V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in hand-held digital cellular equipment, spread spectrum systems, and other applications in the 800MHz to 960MHz band. The device is well suited for either CW or pulsed applications. At 3V, the RF2119 can deliver 29.5dBm of linear output power. The device is self-contained with 50 input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics. The package is a PSSOP-16 with backside ground.
-A3.90 0.10 0.25 0.05 0.05 0.05 3 Exposed 3 Heat Sink
4.90 0.10
0.635
2.70 0.10
6.00 0.20
1.40 0.10
1.70 0.10
8 MAX 0 MIN
0.60 0.15
0.24 0.20
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS
u
Package Style: PSSOP-16
GaAs HBT SiGe HBT
GaAs MESFET Si CMOS
Features
* Single 2V to 5V Supply * 30dBm Output Power at 2.5V * 30dB Small Signal Gain * 53% Efficiency * On-board Power Down Mode * 800MHz to 960MHz Operation
GND 1 LMATCH 2 GND 3 VCC 4 GND1 5 RF IN 6 GND 7 BIAS1 8 BIAS CIRCUITS PACKAGE BASE GND
16 BIAS2 15 NC 14 RF OUT 13 RF OUT 12 RF OUT 11 NC 10 NC 9 VPC
Ordering Information
RF2119 RF2119 PCBA High Efficiency 2V Power Amplifier Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev A8 010720
2-55
RF2119
Absolute Maximum Ratings Parameter
Supply Voltage (RF off) Supply Voltage Control Voltage (VPC)
Preliminary
Rating
+8.0 +5.2 +3.0 +12 1.8 2.5 -30 to +110 -30 to +150
Unit
VDC VDC VDC dBm W W C C
Refer to "Handling of PSOP and PSSOP Products" on page 16-15 for special handling information.
2
POWER AMPLIFIERS
Input RF Power CW Dissipated Power Peak Dissipated Power Operating Case Temperature Storage Temperature
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Parameter
Overall
Usable Frequency Range Small Signal Gain Maximum CW Output Power
Specification
Min. Typ. Max.
Unit
Condition
T=25C, VCC =2.5V, VPC =2.2V, Freq=902MHz, PIN =2dBm
800 29.5 31 32.5 30 31.5 33 45 47 0
Maximum Pulsed Output Power
Total CW Efficiency Pulsed Efficiency Input Power OFF Isolation Second Harmonic Suppression Third Harmonic Suppression Input VSWR Output Load VSWR
902 30 30.5 32 33.5 29.3 31 33 34 51 53 +2 -25 45 >60
960 31.5 34 35 32 34.5 35.5
MHz dB dBm dBm dBm dBm
Supply Voltage=2.5V Supply Voltage=3.0V Supply Voltage=3.5V Supply Voltage=2.0V Supply Voltage=2.5V, 12.5% duty cycle Supply Voltage=3.0V, 12.5% duty cycle Supply Voltage=3.5V, 12.5% duty cycle 12.5% duty cycle VPC =0V, Input Power=+6dBm
+6
% % dBm dBm dBc dBc
<2:1 10:1
AMPS Application #1
Frequency Maximum Output Power Efficiency @ Maximum Output Power Idle Current Second Harmonic Suppression Current Total 824 to 849 30.5 50 195 -45 760 250 MHz dBm % mA dBc mA
With a 50 source impedance No damage. T=25C, VCC =3.4V, VPC =1.8V, Freq=836MHz, PIN =+3dBm
AMPS Application #2
Frequency Maximum Output Power 824 to 849 30.5 31.5 33 55 120 20 MHz dBm dBm dBm % mA mA
T=25C, VCC =3.5V, VPC =1.6V, Freq=836MHz, PIN =+8dBm (see AMPS application schematic) 29.5 30.8 32 50 VCC =2.7V VCC =3.0V VCC =3.5V
Efficiency @ Maximum Output Power Idle Current IPC @ Maximum Output Power
2-56
Rev A8 010720
Preliminary
Parameter
Power Down Control
Turn On/Off Time VPC "OFF" Voltage VPC "ON" Voltage IPC "ON" Current IPC "OFF" Current 100 0.2 2.0 0.5 2.2 30 2.8 10 2.5 2.0 700 900 5.0 1200 ns V V mA A V V mA
RF2119
Specification
Min. Typ. Max.
Unit
Condition
VPC =2.2V Standby, VPC =0.5V Specifications Operating Limits VCC =2.5V, VPC =2.2V, PIN =+3dBm, T=25 C
2
POWER AMPLIFIERS
Power Supply
Voltage Voltage Current Total
Rev A8 010720
2-57
RF2119
Pin 1 2 Function GND LMATCH Description
Ground externally. Interstage tuning. This pin is internally DC blocked and will connect to a shunt inductor or microstrip line used for interstage tuning. Length from pin to via should be approximately 60mils for 915MHz and 75mils for 902MHz and 120mils for 836MHz. The lumped element equivalent is 1.2nH to 2.0nH to ground, depending on frequency band of interest. Ground externally. Power supply for stage 1. VCC should be fed through a 3.9nH inductor with a decoupling capacitor on the VCC side. Ground for stage 1. Keep traces physically short and connect immediately to ground plane for best performance. RF input. An external DC blocking capacitor is required if this port is connected to a DC path to ground or a DC voltage. Ground externally. Ground return for the first stage bias. This pin should be connected to a 33nH inductor to ground. Power control voltage. For maximum power, this voltage should be at least 2.2V. To turn off, this voltage should be less than 0.6V. This pin should be bypassed as close to the pin as practical. No connection. No connection. RF output and power supply for the output stage. The bias for the output stage is provided through this pin and pin 13. An external matching network is required to provide the optimum load impedance; see the application schematics for details. Same as pin 12. Same as pin 12. No connection. Ground return for the second stage bias. This pin should be connected to a 33nH inductor to ground. Ground connection. The backside of the package should be soldered to a top side ground pad which is connected to the ground plane with multiple vias. The pad should have a short thermal path to the ground plane.
Preliminary
Interface Schematic
2
POWER AMPLIFIERS
3 4 5 6 7 8 9 10 11 12
GND VCC1 GND1 RF IN GND BIAS1 VPC NC NC RF OUT
13 14 15 16 Pkg Base
RF OUT RF OUT NC BIAS2 GND
2-58
Rev A8 010720
Preliminary
Application Schematic 902MHz to 928MHz (VCC =2.5V)
33 nH 1 60 mils 2 3 3.9 nH 4 33 pF 33 pF RF IN 6 7 33 nH 8 BIAS CIRCUITS PACKAGE BASE 11 10 9 33 pF 5 13 1.8 nH 12 12pF 5.6 pF 33 pF 15 14 22 nH 3.3 F 16 22 nH
RF2119
VCC
2
33 pF
1 nF
VCC
RF OUT
VPC
AMPS Application Schematic 824MHz to 849MHz (VCC =3.5V)
33 nH 1 120 mils 2 3 15 nH 4 33 pF 2 pF RF IN 12 nH 33 nH 8 2 pF 6 7 BIAS CIRCUITS PACKAGE BASE 11 10 9 33 pF VPC 5 13 2.2 nH 12 10 pF 6 pF 33 pF RF OUT 15 14 22 nH 3.3 F 1 nF 33 pF 16 22 nH VCC
VCC
Rev A8 010720
2-59
POWER AMPLIFIERS
RF2119
Evaluation Board Schematic 824MHz to 928MHz (VCC =3.5V)
(Download Bill of Materials from www.rfmd.com.)
P2
Preliminary
P1 VPC GND GND P1-1 1 2 3 GND GND VCC
2
POWER AMPLIFIERS
Drawing 2119400L1 33 nH 1 60-120 mils 2 L2 3.9 nH P1-1 C6 33 pF RF IN C1 33 pF 4 5 6 L3 33 nH 7 8 BIAS CIRCUITS PACKAGE BASE 13 12 11 10 9 3 15 14 16
P1-3
1 2 3
L5 22nH P1-1 L6 22 nH L4 1.8 nH C4 12pF C5 5.6 pF C7 33 pF C8 1 nF C9 3.3 F
C2 33 pF RF OUT
P1-3 C3 33 pF C10 1 nF
PCB mat'l: FR-4; Two Layer: (31 mils; w/plating)
Off of Pin 2: 60 mil microstrip line for 902 MHZ to 928 MHz and 75 mil microstrip line for 890 MHZ to 915 MHz and 120 mil for 824 MHz to 849 MHz. Lumped element off of Pin 2 would be 1.2 nH to 2.0 nH to ground depending on frequency band of interest.
2-60
Rev A8 010720
Preliminary
Evaluation Board Layout 1.020" x 1.020"
RF2119
2
POWER AMPLIFIERS
Rev A8 010720
2-61
RF2119
Preliminary
2
POWER AMPLIFIERS
2-62
Rev A8 010720

▲Up To Search▲

Price & Availability of RF2119PCBA

	To Download RF2119PCBA Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .